IS61DDP2B251236A1

IS61DDP2B21M18A/A1/A2 IS61DDP2B251236A/A1/A2 1Mx18, 512Kx36 18Mb DDR-IIP (Burst 2) CIO SYNCHRONOUS SRAM (2.0 Cycle Read Latency) ADVANCED INFORMATION JULY 2012 FEATURES DESCRIPTION  512Kx36 and 1Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Common I/O read and write ports.  Synchronous pipeline read with self-timed late write operation.  Double Data Rate (DDR) interface for read and write input ports.  2.0 cycle read latency.  Fixed 2-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.  +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF.  HSTL input and output interface.  Registered addresses, write and read controls, byte writes, data in, and data outputs.  Full data coherency.  Boundary scan using limited set of JTAG 1149.1 functions.  Byte write capability.  Fine ball grid array (FBGA) package: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array  Programmable impedance output drivers via 5x user-supplied precision resistor.  Data Valid Pin (QVLD).  ODT (On Die Termination) feature is supported optionally on data input, K/K#, and BWx#.  The end of top mark (A/A1/A2) is to define options. IS61DDP2B251236A : Don’t care ODT function and pin connection IS61DDP2B251236A1 : Option1 IS61DDP2B251236A2 : Option2 Refer ...