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CM200DU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design Dual IGBTMOD™
200 Amperes/600 Volts
N
P - NUTS (3 PLACES) TC MEASURING POINT A D
Q (2 PLACES)
E
E2G2
CM
C2E1
E2
C1
F
G
B
H
G1E1
F
M
K
K
J
R
C
L
G2 E2
RTC
Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-12F is a 600V (VCES), 200 Ampere Dual IGBTMOD™ Power Module.
Type CM Current Rating Amperes 200 VCES Volts (x 50) 12
C2E1
E2
C1
RTC
E1 G1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 3.70 1.89 3.15± 0.01 0.43 0.16 0.71 0.02 Millimeters 94.0 48.0 80.0± 0.25 11.0 4.0 18.0 0.5 Dimensions J K L M N P Q R Inches 0.53 0.91 1.13 0.67 0.28 M5 0.26 Dia. 0.16 Millimeters 13.5 23.0 28.7 17.0 7.0 M5 6.5 Dia. 4.0
1.18 +0.04/-0.02 30.0 +1.0/-0.5
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM200DU-12F -40 to 150 -40 to 125 600 ± 20 200 400* 200 400* 590 31 40 310 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES I GES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 20mA, VCE = 10V IC = 200A, VGE = 15V, Tj = 25°C IC = 200A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 300V, IC = 200A, VGE = 15V IE = 200A, VGE = 0V Min. – – 5 – – – – Typ. – – 6 1.6 1.6 1240 – Max. 1 20 7 2.2 – – 2.6 Units mA µA Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 200A, VGE1 = VGE2 = 15V, RG = 3.1⍀, Inductive Load Switching Operation IE = 200A VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 3.8 Max. 54 3.6 2 120 100 350 250 150 – Units nf nf nf ns ns ns ns ns µC
Diode Reverse Recovery Time** Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions Per IGBT 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT 1/2 Module, Tc Reference Point Under Chip Contact Thermal Resistance Per Module, Thermal Grease Applied – 0.035 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min. –
Typ.
Max. 0.21
Units °C/W °C/W °C/W
–
–
0.35
–
0.13
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
400
COLLECTOR CURRENT, IC, (AMPERES)
VGE = 20V
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
300
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VGE = 15V.