DatasheetsPDF.com

CM200DU-12F Dataheets PDF



Part Number CM200DU-12F
Manufacturers Powerex Power Semiconductors
Logo Powerex Power Semiconductors
Description IGBT Module
Datasheet CM200DU-12F DatasheetCM200DU-12F Datasheet (PDF)

CM200DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G B H G1E1 F M K K J R C L G2 E2 RTC Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected su.

  CM200DU-12F   CM200DU-12F



Document
CM200DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G B H G1E1 F M K K J R C L G2 E2 RTC Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-12F is a 600V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 12 C2E1 E2 C1 RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 3.70 1.89 3.15± 0.01 0.43 0.16 0.71 0.02 Millimeters 94.0 48.0 80.0± 0.25 11.0 4.0 18.0 0.5 Dimensions J K L M N P Q R Inches 0.53 0.91 1.13 0.67 0.28 M5 0.26 Dia. 0.16 Millimeters 13.5 23.0 28.7 17.0 7.0 M5 6.5 Dia. 4.0 1.18 +0.04/-0.02 30.0 +1.0/-0.5 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM200DU-12F -40 to 150 -40 to 125 600 ± 20 200 400* 200 400* 590 31 40 310 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES I GES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 20mA, VCE = 10V IC = 200A, VGE = 15V, Tj = 25°C IC = 200A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 300V, IC = 200A, VGE = 15V IE = 200A, VGE = 0V Min. – – 5 – – – – Typ. – – 6 1.6 1.6 1240 – Max. 1 20 7 2.2 – – 2.6 Units mA µA Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 200A, VGE1 = VGE2 = 15V, RG = 3.1⍀, Inductive Load Switching Operation IE = 200A VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 3.8 Max. 54 3.6 2 120 100 350 250 150 – Units nf nf nf ns ns ns ns ns µC Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions Per IGBT 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT 1/2 Module, Tc Reference Point Under Chip Contact Thermal Resistance Per Module, Thermal Grease Applied – 0.035 – °C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Min. – Typ. Max. 0.21 Units °C/W °C/W °C/W – – 0.35 – 0.13 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200DU-12F Trench Gate Design Dual IGBTMOD™ 200 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 300 9 VGE = 15V.


CM1901-7R CM200DU-12F CM200DU-12H


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)