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IS61DDPB22M36B1

Integrated Silicon Solution

72Mb DDR-IIP CIO SYNCHRONOUS SRAM

IS61DDPB24M18B/B1/B2 IS61DDPB22M36B/B1/B2 4Mx18, 2Mx36 72Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM (2.5 Cycle Read Latenc...


Integrated Silicon Solution

IS61DDPB22M36B1

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Description
IS61DDPB24M18B/B1/B2 IS61DDPB22M36B/B1/B2 4Mx18, 2Mx36 72Mb DDR-IIP(Burst 2) CIO SYNCHRONOUS SRAM (2.5 Cycle Read Latency) DECEMBER 2015 FEATURES DESCRIPTION  2Mx36 and 4Mx18 configuration available.  On-chip Delay-Locked Loop (DLL) for wide data valid window.  Common I/O read and write ports.  Synchronous pipeline read with self-timed late write operation.  Double Data Rate (DDR) interface for read and write input ports.  2.5 cycle read latency.  Fixed 2-bit burst for read and write operations.  Clock stop support.  Two input clocks (K and K#) for address and control registering at rising edges only.  Two echo clocks (CQ and CQ#) that are delivered simultaneously with data.  +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF.  HSTL input and output interface.  Registered addresses, write and read controls, byte writes, data in, and data outputs.  Full data coherency.  Boundary scan using limited set of JTAG 1149.1 functions.  Byte write capability.  Fine ball grid array (FBGA) package: 13mm x 15mm & 15mm x 17mm body size 165-ball (11 x 15) array  Programmable impedance output drivers via 5x user-supplied precision resistor.  Data Valid Pin (QVLD).  ODT (On Die Termination) feature is supported optionally on data input, K/K#, and BWx#.  The end of top mark (B/B1/B2) is to define options. IS61DDPB22M36B : Don’t care ODT function and pin connection IS61DDPB22M36B1: Option1 IS61DDPB22M36B2: Option2 Refer to more detail description at p...




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