IS61C1024

IS61C1024 IS61C1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM ISSI® MAY 1999 FEATURES High-speed access time: 12, 15, 20, 25 ns Low active power: 600 mW (typical) Low standby power: 500 µW (typical) CMOS standby Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 5V (±10%) power supply Low power version available: IS61C1024L Commercial and industrial temperature ranges available DESCRIPTION The ISSI IS61C1024 and IS61C1024L are very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C1024 and IS61C1024L are available in 32-pin 300-mil SOJ, and TSOP (Type I, 8x20), and sTSOP (Type I, 8 x 13.4) packages. FUNCTIONAL BLOCK DIAGRAM A0-A16 VCC GND I/O0-I/O7 DECODER I/O DATA CIRCUIT 512 x 2048 MEMORY ARRAY COLUMN I/O CE1 CE2 CONTROL OE CIRCUIT WE ISSI reserves the right to make changes to its product...