IS61C6416

IS61C6416 64K x 16 HIGH-SPEED CMOS STATIC RAM ISSI® MAY 1999 FEATURES High-speed access time: 10, 12, 15, and 20 ns CMOS low power operation — 1650 mW (max) @ -10ns Cycle — 55 µW (max) CMOS Standby TTL compatible interface levels Single 5V ± 10% power supply Fully static operation: no clock or refresh required Three state outputs Industrial temperature available Available in 44-pin SOJ package and 44-pin TSOP (Type II) DESCRIPTION The ISSI IS61C6416 is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61C6416 is packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type II). FUNCTIONAL BLOCK DIAGRAM A0-A15 DECODER VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT CE OE CONTROL WE CIRCUIT UB LB 64K x 16 MEMORY ARRAY COLUMN I/O ISSI reserves the right to make changes to its products at any time without notice in ord...