IS46R16800E

IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 JANUARY 2014 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW VDD and VDDQ: 2.5V ± 0.2V (-5,-6) VDD and VDDQ: 2.5V ± 0.1V (-4) SSTL_2 compatible I/O Double-data rate architecture; two data transfers per clock cycle Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs Differential clock inputs (CK and CK) DLL aligns DQ and DQS transitions with CK transitions Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS Four internal banks for concurrent operation Data Mask for write data. DM masks write data at both rising and falling edges of data strobe Burst Length: 2, 4 and 8 Burst Type: Sequential and Interleave mode Programmable CAS latency: 2, 2.5, 3, and 4 Auto Refresh and Self Refresh Modes Auto Precharge Tras Lockout supported (trap = trcd) OPTIONS Configuration(s): 4Mx32, 8Mx16 Package(s): 144 Ball BGA (x32) 66-pin TSOP-II (x16) and 60 Ball BGA (x16) Lead-free package available Temperature Range: Commercial (0°C to +70°C) Industrial (-40°C to +85°C) Automotive, A1 (-40°C to +85°C) Automotive, A2 (-40°C to +105°C) ISSI’s 128-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory array is interna...