IS43R16320E

IS43R86400E IS43/46R16320E, IS43/46R32160E 16Mx32, 32Mx16, 64Mx8 ADVANCED INFORMATION 512Mb DDR SDRAM NOVEMBER 2013 FEATURES VDD and VDDQ: 2.5V ± 0.2V (-5, -6) VDD and VDDQ: 2.5V ± 0.1V (-4) SSTL_2 compatible I/O Double-data rate architecture; two data transfers per clock cycle Bidirectional, data strobe (DQS) is transmitted/ received with data, to be used in capturing data at the receiver DQS is edge-aligned with data for READs and centre-aligned with data for WRITEs Differential clock inputs (CK and CK) DLL aligns DQ and DQS transitions with CK transitions Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS Four internal banks for concurrent operation Data Mask for write data. DM masks write data at both rising and falling edges of data strobe Burst Length: 2, 4 and 8 Burst Type: Sequential and Interleave mode Programmable CAS latency: 2, 2.5 and 3 Auto Refresh and Self Refresh Modes Auto Precharge OPTIONS Die revision: D Configuration(s): 16Mx32 32Mx16 64Mx8 Package(s): 144 Ball BGA (x32) 66-pin TSOP-II (x8, x16) and 60 Ball BGA (x8, x16) Lead-free package available Temperature Range: Commercial (0°C to +70°C) Industrial (-40°C to +85°C) Automotive, A1 (-40°C to +85°C) Automotive, A2 (-40°C to +105°C) DEVICE OVERVIEW ISSI’s 512-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 5...