IS43R16160

IS43R16160 32Mx8, 16Mx16 256Mb Synchronous DRAM FEATURES: Vdd =Vddq = 2.5V+0.2V (-5, -6, -75) Double data rate architecture ; two data transfers per clock cycle. Bidirectional , data strobe (DQS) is transmitted/ received with data Differential clock input (CLK and /CLK) DLL aligns DQ and DQS transitions with CLK transitions edges of DQS Commands entered on each positive CLK edge; Data and data mask referenced to both edges of DQS 4 bank operation controlled by BA0 , BA1 (Bank Address) /CAS latency -2.0 / 2.5 / 3.0 (programmable) ; Burst length -2 / 4 / 8 (programmable) Burst type -Sequential / Interleave (programmable) Auto precharge/ All bank precharge controlled by A10 8192 refresh cycles / 64ms (4 banks concurrent refresh) Auto refresh and Self refresh Row address A0-12 / Column address A0-8(x16) SSTL_2 Interface Package 400-mil, 66-pin Thin Small Outline Package (TSOP II) with 0.65mm lead pitch Temperature Range: Commercial (0oC to +70oC) PRELIMINARY INFORMATION OCTOBER 2008 DESCRIPTION: IS43R16160 is a 4-bank x 4,194,304-word x 16bit double data rate synchronous DRAM , with SSTL_2 interface. All control and address signals are referenced to the rising edge of CLK. Input data is registered on both edges of data strobe, and output data and data strobe are referenced on both edges of CLK. The device achieves very high speed clock rate up to 200 MHz. KEY TIMING PARAMETERS Parameter -5 -6 -75 Unit Clk Cycle Time CA...