DatasheetsPDF.com

CM200DY-24A

Mitsubishi Electric Semiconductor

IGBT Module

MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE CM200DY-24A ¡IC ...........................................


Mitsubishi Electric Semiconductor

CM200DY-24A

File Download Download CM200DY-24A Datasheet


Description
MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE CM200DY-24A ¡IC ................................................................... 200A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 17 23 23 17 C2E1 E2 C1 E2 G2 4 G1 E1 12 2-φ6.5 MOUNTING HOLES 12 80±0.25 12 4 3-M5 NUTS 20 (14) 48 13 18 4 TAB #110. t=0.5 16 7 16 7 16 7.5 E2 G2 C2E1 E2 C1 G1 E1 29 +0.1 –0.5 LABEL 21.2 CIRCUIT DIAGRAM Mar. 2004 MITSUBISHI IGBT MODULES CM200DY-24A HIGH POWER SWITCHING USE (Tj = 25°C) ABSOLUTE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Conditions G-E Short C-E Short DC, TC = 84°C*1 Pulse Pulse TC = 25°C*1 (Note 2) (Note 2) Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Main terminal to base plate, AC 1 min. Main terminal M5 Mounting holes M6 Typical value Ratings 1200 ±20 200 400 200 400 1340 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A W °C °C V Nm g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Parameter (Tj = 25°C) Test condi...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)