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CM200DY-24H

Powerex Power Semiconductors

Dual IGBT Module

CM200DY-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ H-Series ...


Powerex Power Semiconductors

CM200DY-24H

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Description
CM200DY-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ H-Series Module 200 Amperes/1200 Volts A B F F G P C2E1 E2 C1 G2 E2 C D G1 E1 J P K N - DIA. (4 TYP.) M M Q - M6 THD (3 TYP.) R .110 TAB L E H M Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G2 E2 C2E1 E2 C1 E1 G1 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DY-24H is a 1200V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 24 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 4.25 3.66± 0.01 2.44 1.89± 0.01 1.22 Max. 0.98 0.85 0.60 Millimeters 108.0 93.0± 0.25 62.0 48.0± 0.25 31.0 Max. 25.0 21.5 15.2 Dimensions J K L M N P Q R Inches 0.59 0.55 0.30 0.28 0.256 Dia. 0.24 M6 Metric 0.20 Millimeters...




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