Document
TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
TS820
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Symbol
Simplified outline
ak g 1 2 3 TO-220
Pin Description
1 Cathode 2 Anode 3 Gate
Applications:
Motor control Industrial and domestic lighting Heating Static switching
Features
Blocking voltage to 800 V On-state RMS current to 8 A Ultra low gate trigger current
SYMBOL PARAMETER
VDRM
Repetitive peak off-state voltages
IT RMS
RMS on-state current
ITSM Non-repetitive peak on-state current
600T 800T
Value
600 800
8
73
Unit
V A A
SYMBOL
Rth j-c
PARAMETER
Junction to case (DC)
Rth j-a
Junction to ambient (DC)
Value
20 70
UNIT
/W /W
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TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
TS820
SCRs
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
V VDRM RRM IT(RMS) I T ( AV )
ITSM
I2t
Repetitive peak off-state Voltages RMS on-state current Average on-state current
Non-repetitive peak on-state current I2t for fusing
CONDITIONS
all conduction angles Half sine wave;<=111 half sine wave; Tj = 25 prior to surge T=10ms
600T 800T
t=10ms t=8.3ms Tj=25
MIN
-
-
DIT/dt
IGM VRGM PGM P G(AV) Tstg
Tj
Critical rate of rise of on-state current
IG=2*IGT, tr
Peak gate current
Tp=20 s
Peak reverse gate voltage
100ns
F=60Hz Tj=125 Tj=125
Peak gate power Average gate power
Over any 20 ms period
Storage temperature
Operating junction Temperature
-
-
-40
-
MAX
600 800
8 5 70 73 24.5
50
4 5 5 1 150
1252
UNIT
V
A A A A A2S
A/ s
A V W W
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
Static characteristics IGT Gate trigger current
CONDITIONS
VD=12V; RL=140
VGT
Gate trigger voltage
VD=12V; RL=140
VGD
VD=V ;DRM RL=3.3K RGK=220
IL
Latching current
IG=1mA,R =GK 1k
IH
Holding current
IT=50mA,RGK=1k
VTO
Threshold voltage
Tj=125
Rd
Dynamic resistance
TJ=125
MIN TYP MAX UNIT
Tj=125
-
-
-
-
- 200 A
- 0.8 V - 0.1 V
- 6 mA
- 5 mA
-
0.85
V
- 46 m
Dynamic Characteristics
DV/dt
Critical rate of rise of Off-state voltage
VRG
VTM
VD=65% V ;DRM R =GK 220 ; I =RG 10 A
TJ=125
ITM=16A tp=380 S
5 - - V/ s 8- -V - - 1.6 V
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TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
Description
TS820
SCRs
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TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
Description
TS820
SCRs
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TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
TS820
SCRs
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