MOSFET Transistor. 40N15 Datasheet

40N15 Transistor. Datasheet pdf. Equivalent

Part 40N15
Description N-Channel MOSFET Transistor
Feature INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 40N15 ·FEATURES ·.
Manufacture Inchange Semiconductor
Datasheet
Download 40N15 Datasheet

UNISONIC TECHNOLOGIES CO., LTD 40N15 Preliminary Power MOSFE 40N15 Datasheet
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc 40N15 Datasheet
Recommendation Recommendation Datasheet 40N15 Datasheet





40N15
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
40N15
·FEATURES
·Drain Current ID= 40A@ TC=25
·Drain Source Voltage-
: VDSS= 150V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.08Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
150
±30
V
V
ID Drain Current-Continuous
40 A
IDM Drain Current-Single Plused
100 A
PD Total Dissipation @TC=25
150 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.63 /W
62.5 /W
isc websitewww.iscsemi.cn
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40N15
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
40N15
·ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=250µA
IS= 40A ;VGS= 0
VGS= 10V; ID= 20A
VGS= ±20V;VDS= 0
VDS=150V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=20A;
VDD=75V;
RL=4.7Ω
MIN TYPE MAX UNIT
150 V
2.0 4.5 V
2.5 V
0.08 Ω
±500 nA
250 µA
4500
200 pF
800
280
130
ns
210
630
·
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn





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