INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
40N25
·FEATURES ·Drain Current ID= 40...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
40N25
·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.08Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
250 ±30
V V
ID Drain Current-Continuous
40 A
IDM Drain Current-Single Plused
160 A
PD Total Dissipation @TC=25℃
250 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance, Junction to Case
0.833 ℃/W
Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
40N25
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer capacitance
Coss Output Capacitance
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off Delay Time
CONDITIONS VG...