N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
60N05
Preliminary
60A, 50V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 60N05 is an N...
Description
UNISONIC TECHNOLOGIES CO., LTD
60N05
Preliminary
60A, 50V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 60N05 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge.
The UTC 60N05 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc.
FEATURES
* RDS(ON)=12mΩ @ VGS=10V,ID=30A * High Switching Speed * High Current Capacity * Low Gate Charge(typical 130nC)
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
60N05L-TA3-T
60N05G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220
Pin Assignment 123 GDS
Packing Tube
www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-716.a
60N05
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0)
VDSS 50 V
Drain-Gate Voltage (RGS=20k Ω) VDGR 50 V
Gate-Source Voltage
VGSS ±20 V
Drain Current
Continuous
TC=25°C TC=100°C
ID
60 A 50 A
Pulsed (Note 1)
IDM
240 A
Avalanche Current Avalanche Energy
IAR 60 A EAS 600 mJ EAR 150 mJ
Power Dissipation Junction Temperature
PD 125 W TJ 150 °C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. ...
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