70N06 Transistor Datasheet

70N06 Datasheet, PDF, Equivalent


Part Number

70N06

Description

N-Channel MOSFET Transistor

Manufacture

Inchange Semiconductor

Total Page 2 Pages
Datasheet
Download 70N06 Datasheet


70N06
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
70N06
·DESCRIPTION
·Drain Current ID= 70A@ TC=25
·Drain Source Voltage-
: VDSS= 60V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
60
±30
70
V
V
A
ID(puls)
Pulse Drain Current
280 A
Ptot Total Dissipation@TC=25
250 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.5 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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70N06
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
70N06
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=1mA
IF=70A ;VGS= 0
VGS= 10V; ID=35A
VGS= ±20V;VDS= 0
VDS= 60V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
MIN TYPE MAX UNIT
60 V
2.0 4.0 V
1.4 V
0.018 Ω
±100 nA
1 µA
3300
80 pF
530
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Features INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on 70N06 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Volta ge- : VDSS= 60V(Min) ·Fast Switching S peed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATIN GS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0 ) VGS Gate-Source Voltage ID Drain Cu rrent-continuous@ TC=25℃ 60 ±30 70 V V A ID(puls) Pulse Drain Current 280 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temp erature 150 ℃ Tstg Storage Temperatu re Range -55~150 ℃ ·THERMAL CHARAC TERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, J unction to Case Thermal Resistance, Jun ction to Ambient 0.5 ℃/W 62.5 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pd fFactory Pro www.fineprint.cn INCHANG E Semiconductor isc N-Channel MOSFET Tr ansistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 70N06 SYMBOL P.
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