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70N06 Dataheets PDF



Part Number 70N06
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description TO-3 N-Channel MOSFET Transistor
Datasheet 70N06 Datasheet70N06 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N06 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 60 ±30 70 V V A ID(puls) Pulse Drain Current 280 A Ptot Total Dissipation@TC=25℃ 250 W .

  70N06   70N06



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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N06 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 60 ±30 70 V V A ID(puls) Pulse Drain Current 280 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 0.5 ℃/W 62.5 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 70N06 SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance CONDITIONS VGS= 0; ID= 250µA VDS= VGS; ID=1mA IF=70A ;VGS= 0 VGS= 10V; ID=35A VGS= ±20V;VDS= 0 VDS= 60V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz MIN TYPE MAX UNIT 60 V 2.0 4.0 V 1.4 V 0.018 Ω ±100 nA 1 µA 3300 80 pF 530 isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .


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