70N10 Transistor Datasheet

70N10 Datasheet, PDF, Equivalent


Part Number

70N10

Description

N-Channel MOSFET Transistor

Manufacture

Inchange Semiconductor

Total Page 2 Pages
Datasheet
Download 70N10 Datasheet


70N10
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
70N10
·DESCRIPTION
·Drain Current ID= 70A@ TC=25
·Drain Source Voltage-
: VDSS= 100V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
100
±30
70
V
V
A
ID(puls)
Pulse Drain Current
280 A
Ptot Total Dissipation@TC=25
250 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.5 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

70N10
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25)
isc Product Specification
70N10
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD Diode Forward On-Voltage
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
IDSS Zero Gate Voltage Drain Current
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
CONDITIONS
VGS= 0; ID= 250µA
VDS= VGS; ID=250µA
IS=70A ;VGS= 0
VGS= 10V; ID=45A
VGS= ±20V;VDS= 0
VDS= 100V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
MIN TYPE MAX UNIT
100 V
2.0 4.0 V
1.4 V
0.025 Ω
±100 nA
1 µA
5800
190 pF
300
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn


Features INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on 70N10 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Volta ge- : VDSS= 100V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATI NGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS= 0) VGS Gate-Source Voltage ID Drain C urrent-continuous@ TC=25℃ 100 ±30 7 0 V V A ID(puls) Pulse Drain Current 280 A Ptot Total Dissipation@TC=25 250 W Tj Max. Operating Junction Te mperature 150 ℃ Tstg Storage Tempera ture Range -55~150 ℃ ·THERMAL CHAR ACTERISTICS SYMBOL PARAMETER MAX UNI T Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, J unction to Ambient 0.5 ℃/W 62.5 ℃/ W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHA NGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 70N10 SYMBOL .
Keywords 70N10, datasheet, pdf, Inchange Semiconductor, N-Channel, MOSFET, Transistor, 0N10, N10, 10, 70N1, 70N, 70, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)