75N75

isc N-Channel MOSFET Transistor 75N75 FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.011Ω(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Solenoid and relay drivers ·DC motor control ·DC-DC converters DC ·Automotive environment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ±20 V Drain Current-Continuous@TC=25℃ 75 ID A Drain Current-Continuous@TC=100℃ 60 IDM Drain Current-Single Pluse 300 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.65 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62 ℃/W isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 40A IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VGS= ±20V;VDS= 0 VDS= 75V; VGS= 0 VDS= 60V; VGS= 0; Tj= 150℃ IS= 78A; VGS=0 75N75 MIN MAX UNIT 75 V 2...