Document
THYRISTOR MODULE
SCA(SCE)200DA
SCA(SCE)200DA
《Features and Advantages》
《》
New and unique gate design for higher di/dv (Integrated Thyristor. 2.5 times higher than existing products)
Newly designed and less-layered internal structure for improved heat dissipation (low thermal resistance) In addition to reduced layer design, soldering on both sides of chips increased the long-term reliability (2 times longer than existing products) UL recognized under UL File E76102 EU RoHS compliant
UL RoHS
《Applications》
《》
Motor drives Servo controller Power controller UPS Soft starter Power supplies
UPS
di/dt 2.5
2 UL File E76102
Circuit Diagram
UL; E76102(M)
Unit :mm
SCA
■Maximum Ratings
Symbol
Item
VRRM VRSM VDRM
*Repetitive Peak Reverse Voltage *ピークし *Non-Repetitive Peak Reverse Voltage *ピークし Repetitive Peak Off-state Voltage ピークしオフ
Symbol IT(AV) IF(AV) IT(RMS) IF(RMS) ITSM IFSM I2t
PGM
PG(AV)
IFGM
VFGM
VRGM
di/dt
VISO
Tj
Tstg
Item
*Average On-state(Forward)Current *オン()
*R.M.S. On-state(Forward)Current *オン()
*Surge On-state(Forward)Current *サージオン()
*I2t * Peak Gate Power Dissipation ピークゲート Average Gate Power Dissipation ゲート Peak Gate Current ピークゲート Peak Gate Voltage(Forward) ピークゲート Peak Gate Voltage(Reverse) ピークゲート Critical Rate of Rise of On-state Current オン *Isolation Breakdown Voltage * *Operating Junction Temperature * *Storage Temperature
*
Mounting Torque
Moun(t M6)
トルク
Termina(l M6)
Mass
SCE
(Tj=25℃ unless otherwise specified/なきはTj=25℃とする)
Ratings
SCA200DA80
SCA200DA160
SCE200DA80
SCE200DA160
Unit
800
1600
V
960
1700
V
800
1600
V
Conditions
Single phase, half wave, 180°conduction, 180°
Tc=82℃
Single phase, half wave, 180°conduction, 180°
Tc=82℃
½cycle, 50/60Hz, Peak value, non-repetitive 50/60Hz 1サイクル し
Value for one cycle surge current
サージオンにする
Ratings Unit 200 A
314 A
6000/6500
A
180000
A2s
10 W
3W
3A
10 V
5V
IG=100mA, VD=½VDRM, dIG/dt=0.1A/μs
A.C. 1minute ,A.C.1
500 2500 -40~+125
A/μs V ℃
Recommended value
2.5~3.9N・m
Recommended value
2.5~3.9N・m
Typical value
-40~+125
4.7 4.7 210
℃ N・m
g
(SCA160AA-S75-1303)
SCA(SCE)200DA
■Electrical Characteristics
Symbol
Item
IDRM
Repetitive Peak Off-state Current オフ
IRRM
*Repetitive Peak Reverse Current *
VTM *On-state(Forward)Voltage VFM *オン()
VT(TO)
*Threshold Voltage *
rt
*Dynamic Resistance *オン
IGT
Gate Trigger Current ゲートトリガ
VGT
Gate Trigger Voltage ゲートトリガ
VGD
Gate Non-Trigger Voltage ゲートトリガ
tgt
Turn-on Time ターンオン
dv/dt
Critical Rate of Rise of Off-state Voltage オフ
IH
Holding Current
IL
Latching Current ラッチング
Rth(j-c)
*Thermal Resistance *
Rth(j-c)
*Effective Thermal Resistance *
Rth(c-s)
*Interface Thermal Resistance *
(Tj=25℃ unless otherwise specified/なきはTj=25℃とする)
Conditions
Ratings min. typ. max. Unit
Tj=125℃, VD=VDRM
100 mA
Tj=125℃, VR=VRRM
IT=500A IT=600A Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃
VD=6V, IT=1A
100 mA
1.34 1.4
V
1.06 0.87
V
1.77 1.15
mΩ
100 mA
VD=6V, IT=1A
3V
Tj=125℃, VD=½VDRM
0.25 V
IT=200A, IG=100mA, VD=½VDRM, dIG/dt=0.1A/μs
10 μs
Tj=125℃, VD=⅔VDRM, exp. waveform 1000
V/μs
140 mA
cont., Junction to case, per one element ―ケース cont., エレメントり sin.180°, Junction to case, per one element ―ケース, sin.180°, エレメントり rec.120°, Junction to case, per one element ―ケース, rec.120°, エレメントり Case to Heat sink, per one element ケース―ヒートシンク, エレメントり Thermal conductivity(Silicon grease)=7×10-[3 W/㎝・℃] シリコングリスの=7×10-3[W/㎝・℃]
230 mA
0.155 ℃/W
0.16 ℃/W
0.17
0.1 ℃/W
*mark: Thyristor and Diode part. No mark: Thyristor part. )*のは、サイリスタびダイオードのにします。そののはにサイリスタにします。
SCA(SCE)200DA
.