Power Transistors
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplifica...
Power
Transistors
2SA1535, 2SA1535A
Silicon
PNP epitaxial planar type
For low-frequency driver and high power amplification Complementary to 2SC3944 and 2SC3944A
s Features
q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics
q High transition frequency fT q Makes up a complementary pair with 2SC3944 and 2SC3944A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SA1535 base voltage 2SA1535A Collector to 2SA1535 emitter voltage 2SA1535A
VCBO VCEO
–150 –180 –150 –180
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO ICP IC
PC
–5 –1.5 –1 15 2.0
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V
V V A A W ˚C ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current 2SA1535
Collector to emitter 2SA1535
voltage
2SA1535A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
ICBO
VCEO
VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob
VCB = –150V, IE = 0 IC = –1mA, IB = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –500mA, IB = –50mA IC = –500mA, IB = –50mA VCE = –10V, IC = –50mA, f = 10MHz VCB = –10V, IE = 0, f = 1MHz
*hFE1 Rank classif...
