2SC4806

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1700V(Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ INCHANGE Semiconductor 2SC4806 isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4806 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 1A ICBO Collector Cutoff Current VCB= 1700V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 V 1.5 V 1.0 mA 10 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V 8 hFE-2 DC Current Gain IC= 3.5A; VCE= 5V 3.5 7.5 fT Curre...