Document
2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes
Outline
REJ03G1004-0200 (Previous: ADE-208-1352)
Rev.2.00 Sep 07, 2005
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1. Gate G 2. Source
(Flange) 3. Drain
1 2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK2220, 2SK2221
Absolute Maximum Ratings
Item
Drain to source voltage
2SK2220
2SK2221
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at Tc = 25°C
Electrical Characteristics
Symbol VDSX
VGSS ID IDR
Pch*1 Tch Tstg
Item
Drain to source
2SK2220
breakdown voltage
2SK2221
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note: 2. Pulse Test
Symbol V(BR)DSX
V(BR)GSS VGS(off) VDS(sat)
|yfs| Ciss Coss Crss ton toff
Min 180 200 ±20 0.15 — 0.7 — — — — —
Typ — — — — — 1.0 600 800 8 250 90
Ratings 180 200 ±20 8 8 100 150
–55 to +150
(Ta = 25°C)
Unit V
V A A W
°C °C
Max — — — 1.45 12 1.4 — — — — —
(Ta = 25°C)
Unit Test conditions V ID = 10 mA, VGS = –10 V
V IG = ±100 µA, VDS = 0 V ID = 100 mA, VDS = 10 V V ID = 8 A, VGD = 0 V*2 S ID = 3 A, VDS = 10 V*2 pF VGS = –5 V, VDS = 10 V, pF f = 1 MHz pF ns VDD = 30 V, ID = 4 A ns
Rev.2.00 Sep 07, 2005 page 2 of 5
2SK2220, 2SK2221
Main Characteristics
Power vs. Temperature Derating 150
100
50
Channel Dissipation Pch (W)
Drain Current ID (A)
0 50 100 150 Case Temperature TC (°C)
Typical Output Characteristics
10 VGS = 10 V
8
9 8
7
TC = 25°C
6 6
Pch = 125 W
5
44
3 2
2 01
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
–25°C
25
=
T
C
Typical Transfer Characteristics 10 8 VDS = 10 V 6 75
4
2
0 2 4 6 8 10 Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 5
Drain Current ID (A)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operation Area
20 Ta = 25°C
10
5
PW
= 10 PW
m= s1O0(p10emSrahstoi(ot1)nS(hToCt)=
DC
2
25°C)
1.0
0.5
0.2 5
2SK2220 2SK2221 10 20 50 100 200 500
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 TC = 25°C
8
6
VGS = 10 V 98
7 6
5
44
3 2
2 10
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
25 75
–25°C
=
T
C
Typical Transfer Characteristics 1.0 0.8 VDS = 10 V 0.6 0.4 0.2
0 0.4 0.8 1.2 1.6 2.0 Gate to Source Voltage VGS (V)
Forward Transfer Admittance yfs (S) Switching Time t on, toff (ns)
2SK2220, 2SK2221
Forward Transfer Admittance vs. Frequency
5
1.0
0.1 0.01
TC = 25°C VDS = 10 V ID = 2 A
0.001
0.0005 2k
10 k 100 k 1 M Frequency f (Hz)
10 M 20 M
Switching Time Test Circuit Output RL
Input
PW = 50 µs duty ratio = 1%
50 Ω
30 V
Switching Time vs. Drain Current
500
t on 200
100
50 t off
20
10
5 0.1 0.2
0.5 1.0 2
5
Drain Current ID (A)
10
Input 10% t on
Output 90%
Waveforms
90%
t off 10%
Rev.2.00 Sep 07, 2005 page 4 of 5
2SK2220, 2SK2221
Package Dimensions
JEITA Package Code SC-65
RENESAS Code PRSS0004ZE-A
Package Name TO-3P / TO-3PV
15.6 ± 0.3 φ3.2 ± 0.2
MASS[Typ.] 5.0g
4.8 ± 0.2 1.5
Unit: mm
1.0 5.0 ± 0.3
0.5
2.0 14.9 ± 0.2 19.9 ± 0.2
0.3
1.6 1.4 Max
2.0
2.8
18.0 ± 0.5
1.0 ± 0.2
3.6 0.9 1.0
5.45 ± 0.5
5.45 ± 0.5
0.6 ± 0.2
Ordering Information
Part Name
Quantity
Shipping Container
2SK2220-E
360 pcs
Box (Tube)
2SK2221-E
360 pcs
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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