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2SK2221 Dataheets PDF



Part Number 2SK2221
Manufacturers Renesas
Logo Renesas
Description Silicon N-Channel MOSFET
Datasheet 2SK2221 Datasheet2SK2221 Datasheet (PDF)

2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Source (Flange) 3. Drain .

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2SK2220, 2SK2221 Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Outline REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Source (Flange) 3. Drain 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 5 2SK2220, 2SK2221 Absolute Maximum Ratings Item Drain to source voltage 2SK2220 2SK2221 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Electrical Characteristics Symbol VDSX VGSS ID IDR Pch*1 Tch Tstg Item Drain to source 2SK2220 breakdown voltage 2SK2221 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 2. Pulse Test Symbol V(BR)DSX V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss ton toff Min 180 200 ±20 0.15 — 0.7 — — — — — Typ — — — — — 1.0 600 800 8 250 90 Ratings 180 200 ±20 8 8 100 150 –55 to +150 (Ta = 25°C) Unit V V A A W °C °C Max — — — 1.45 12 1.4 — — — — — (Ta = 25°C) Unit Test conditions V ID = 10 mA, VGS = –10 V V IG = ±100 µA, VDS = 0 V ID = 100 mA, VDS = 10 V V ID = 8 A, VGD = 0 V*2 S ID = 3 A, VDS = 10 V*2 pF VGS = –5 V, VDS = 10 V, pF f = 1 MHz pF ns VDD = 30 V, ID = 4 A ns Rev.2.00 Sep 07, 2005 page 2 of 5 2SK2220, 2SK2221 Main Characteristics Power vs. Temperature Derating 150 100 50 Channel Dissipation Pch (W) Drain Current ID (A) 0 50 100 150 Case Temperature TC (°C) Typical Output Characteristics 10 VGS = 10 V 8 9 8 7 TC = 25°C 6 6 Pch = 125 W 5 44 3 2 2 01 0 10 20 30 40 50 Drain to Source Voltage VDS (V) –25°C 25 = T C Typical Transfer Characteristics 10 8 VDS = 10 V 6 75 4 2 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 5 Drain Current ID (A) Drain Current ID (A) Drain Current ID (A) Maximum Safe Operation Area 20 Ta = 25°C 10 5 PW = 10 PW m= s1O0(p10emSrahstoi(ot1)nS(hToCt)= DC 2 25°C) 1.0 0.5 0.2 5 2SK2220 2SK2221 10 20 50 100 200 500 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 TC = 25°C 8 6 VGS = 10 V 98 7 6 5 44 3 2 2 10 0 2 4 6 8 10 Drain to Source Voltage VDS (V) 25 75 –25°C = T C Typical Transfer Characteristics 1.0 0.8 VDS = 10 V 0.6 0.4 0.2 0 0.4 0.8 1.2 1.6 2.0 Gate to Source Voltage VGS (V) Forward Transfer Admittance yfs (S) Switching Time t on, toff (ns) 2SK2220, 2SK2221 Forward Transfer Admittance vs. Frequency 5 1.0 0.1 0.01 TC = 25°C VDS = 10 V ID = 2 A 0.001 0.0005 2k 10 k 100 k 1 M Frequency f (Hz) 10 M 20 M Switching Time Test Circuit Output RL Input PW = 50 µs duty ratio = 1% 50 Ω 30 V Switching Time vs. Drain Current 500 t on 200 100 50 t off 20 10 5 0.1 0.2 0.5 1.0 2 5 Drain Current ID (A) 10 Input 10% t on Output 90% Waveforms 90% t off 10% Rev.2.00 Sep 07, 2005 page 4 of 5 2SK2220, 2SK2221 Package Dimensions JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Package Name TO-3P / TO-3PV 15.6 ± 0.3 φ3.2 ± 0.2 MASS[Typ.] 5.0g 4.8 ± 0.2 1.5 Unit: mm 1.0 5.0 ± 0.3 0.5 2.0 14.9 ± 0.2 19.9 ± 0.2 0.3 1.6 1.4 Max 2.0 2.8 18.0 ± 0.5 1.0 ± 0.2 3.6 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 0.6 ± 0.2 Ordering Information Part Name Quantity Shipping Container 2SK2220-E 360 pcs Box (Tube) 2SK2221-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 5 of 5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any .


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