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BT134-600D

Inchange Semiconductor

Triacs

INCHANGE Semiconductor isc Triacs isc Product Specification BT134-600D FEATURES ·With TO-126P package ·Designed for us...


Inchange Semiconductor

BT134-600D

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Description
INCHANGE Semiconductor isc Triacs isc Product Specification BT134-600D FEATURES ·With TO-126P package ·Designed for use in general purpose bidirectional switching and phase control applications , which are intended to be interfaced directly to microcontrollers , logic integrated circuits and other low power gate trigger circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RMS) ITSM PGM PG(AV) Tj Tstg Repetitive peak off-state voltage Repetitive peak off-state voltage RMS on-state current (full sine wave) Non-repetitive peak on-state current Peak gate power dissipation Average gate power dissipation Operating junction temperature Storage temperature MIN 600 600 4 25 5 0.5 110 -45~150 UNIT V V A A W W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current Ⅰ VR=VRRM, VR=VRRM, Tj=110℃ VD=VDRM, VD=VDRM, Tj=110℃ 0.01 0.2 mA 0.01 0.2 mA 5 IGT Gate trigger current Ⅱ VD=12V; IT= 0.1A, RL= 30Ω Ⅲ 5 mA 5 Ⅳ 10 VTM On-state voltage IH Holding current VGT Gate trigger voltage IT= 5A IGT= 0.1A, VD= 12V VD=12V; RL= 30Ω 1.7 V 10 mA 1.5 V isc website:www.iscsemi.cn ...




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