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BTA06-600A

Inchange Semiconductor

Triacs

isc Triacs BTA06-600A FEATURES ·With TO-220AB insulated package ·Suitables for general purpose applications where gate...


Inchange Semiconductor

BTA06-600A

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isc Triacs BTA06-600A FEATURES ·With TO-220AB insulated package ·Suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current (full sine wave)Tj=105℃ 6 A ITSM Non-repetitive peak on-state current tp=20ms 60 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 2.7 ℃/W Rth(j-a) Thermal resistance, junction to ambient 60 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=110℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=110℃ Ⅰ IGT Gate trigger current Ⅱ VD=12V; RL= 30Ω Ⅲ Ⅳ IH Holding current IGT= 0.1A, Gate Open VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω VTM On-state voltage IT= 8.5A; tp= 380μs MAX 0.01 0.5 0.01 0.5 10 UNIT mA mA 10 mA 10 25 25 mA 1.3 V 1.65 V isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Triacs BTA06-600A NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information cont...




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