D45VH

INCHANGE Semiconductor isc Silicon PNP Power Transistors DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speed ·Complement to Type D44VH Series APPLICATIONS ·Designed for high-speed switching applications, such as switching regulators and high frequency inverters. They are also well-suited for drivers for high power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT D45VH 1 -50 VCEV Collector-Emitter Voltage D45VH 4 D45VH 7 -70 -80 V D45VH 10 -100 D45VH 1 -30 VCEO Collector-Emitter Voltage D45VH 4 D45VH 7 -45 -60 V D45VH 10 -80 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range -20 83 150 -55~150 A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case 1.5 ℃/W Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Product Specification D45VH Series isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification D45VH Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT D45VH 1 -30 VCEO(SUS) Collector-Emitter Sustaining Voltage D45VH 4 D45VH 7 IC= -25mA ;IB= 0 -45 V -60 D45VH 10 -80 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A ;IB= -0.8A VCE(sat)-2 VBE(sat) ICEV IEBO Collecto...