Power Transistors. B688 Datasheet

B688 Transistors. Datasheet pdf. Equivalent


Savantic B688
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB688
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SD718
APPLICATIONS
·Power amplifier applications
·Recommend for 45~50W audio frequency
amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-120
-120
-5
-8
-0.8
80
150
-55~150
UNIT
V
V
V
A
A
W


B688 Datasheet
Recommendation B688 Datasheet
Part B688
Description Silicon PNP Power Transistors
Feature B688; SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB688 DESCRIPTION ·Wit.
Manufacture Savantic
Datasheet
Download B688 Datasheet




Savantic B688
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB688
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBE Base-emitter voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE DC current gain
IC=-5A ; VCE=-5V
VCB=-120V; IE=0
VEB=-5V; IC=0
IC=-1A ; VCE=-5V
fT Transition frequency
IC=-1A ; VCE=-5V
Cob Output capacitance
IE=0 ; VCB=-10V ;f=1MHz
MIN TYP. MAX UNIT
-120
V
-2.5 V
-1.5 V
-10 µA
-10 µA
55 160
10 MHz
280 pF
hFE Classifications
RO
55-110
80-160
2



Savantic B688
SavantIC Semiconductor
Silicon PNP Power Transistors
PACKAGE OUTLINE
Product Specification
2SB688
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
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