GT43

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 2000(Min.)@ IC= 4A ·Low Collector Saturation Voltage : VCE(sat)= 3.0V(Max.)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching for dynamotor excitation ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ GT43 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA ;IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA ;IE=0 V(BR)EBO Emitter-Base Breakdown Voltage IE=50mA ;IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=1A; IB=10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=6A; IB=50mA ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 4A; VCE= 4V hFE-2 DC Current Gain IC= 5mA; VCE= 4V GT43 MIN TYP. MAX UNIT ...