isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF150
DESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRF150
DESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.055Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supplies ·UPS ·Motor controls ·High energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
40
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 0.83 ℃/W
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isc N-Channel Mosfet
Transistor
INCHANGE Semiconductor
IRF150
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=20A
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=100V; VGS=0
VSD
Diode Forward Voltage
IS=40A; VGS=0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr
Rise Time
td(on)
T...