INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF153
DESCRIPTION ·Drain Current ID=...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF153
DESCRIPTION ·Drain Current ID=33A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.08Ω(Max) ·High Power,High Speed Applications
APPLICATIONS ·Switching power supplies ·UPS ·Motor controls ·High energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
60 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 33 A
Total Dissipation@TC=25℃
150 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 0.83 ℃/W
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=20A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=60V; VGS=0
VSD Diode Forward Voltage
IS=33A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
td(off)
Turn-off...