Semiconductor
October 1997
IRF220, IRF221, IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Powe...
Semiconductor
October 1997
IRF220, IRF221, IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
Features
4.0A and 5.0A, 150V and 200V rDS(ON) = 0.8Ω and 1.2Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF220
TO-204AA
IRF220
IRF221
TO-204AA
IRF221
IRF222
TO-204AA
IRF222
IRF223
TO-204AA
IRF223
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate power field effect
transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA09600.
Symbol
D
G S
Packaging
DRAIN (FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 199&
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File Number 1567.2
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