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IRF222

Harris

N-Channel Power MOSFETs


Description
Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Features 4.0A and 5.0A, 150V and 200V rDS(ON) = 0.8Ω and 1.2Ω SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Liter...



Harris

IRF222

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