K2111 Datasheet: 2SK2111





K2111 2SK2111 Datasheet

Part Number K2111
Description 2SK2111
Manufacture NEC
Total Page 6 Pages
PDF Download Download K2111 Datasheet PDF

Features: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2 SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and is a swi tching element that can be directly dri ven by the output of an IC operating at 5 V. This product has a low ON resista nce and superb switching characteristic s and is ideal for driving the actuator s, such as motors and DC/DC converters. FEATURES • Low ON resistance RDS(on) = 0.6 Ω MAX. @VGS = 4.0 V, ID = 0.5 A • High switching speed ton + toff < 100 ns • Low parasitic capacitance PACKAGE DIMENSIONS (in mm) 4.5 ± 0.1 1.6 ± 0.2 1.5 ± 0.1 0.8 MIN. 2.5 ± 0.1 4.0 ± 0.25 SDG 0.42 ±0.06 1.5 0.42 0.47 ±0.06 ±0.06 3.0 0.41+– 00..0053 EQUIVALENT CIRCUIT Drain (D) Gate (G) Internal diode Gate protect ion diode Source (S) PIN CONNECTIONS S : Source D: Drain G: Gate Marking: NU ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER Drain to Source Voltage Gat e to Source Voltage Drain Current (DC) Drain Current (Pulse) Total Power Dissipati.

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2111
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2111 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.
FEATURES
• Low ON resistance
RDS(on) = 0.6 MAX. @VGS = 4.0 V, ID = 0.5 A
• High switching speed
ton + toff < 100 ns
• Low parasitic capacitance
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1
1.6 ± 0.2
1.5 ± 0.1
SDG
0.42
±0.06 1.5
0.42
0.47 ±0.06
±0.06
3.0
0.41+–00..0053
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Internal diode
Gate protection
diode
Source (S)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NU
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW 10 ms,
Duty cycle 50 %
16 cm2 × 0.7 mm, ceramic substrate used
RATING
60
±20
±1.0
±2.0
2.0
150
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
Document No. D11231EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
1996

                 






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