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DMP1100UCB4 Dataheets PDF



Part Number DMP1100UCB4
Manufacturers Diodes
Logo Diodes
Description P-Channel MOSFET
Datasheet DMP1100UCB4 DatasheetDMP1100UCB4 Datasheet (PDF)

DMP1100UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ @VGS = -4.5V, TA = +25°C) BVDSS -12V RDS(ON) 65mΩ Qg 9nC Qgd 2.4nC ID -3.2A Features and Benefits  Built-in G-S Protection Diode against ESD 2kV HBM  Ultra Small 0.8mm x 0.8mm Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET has been designed .

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DMP1100UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ @VGS = -4.5V, TA = +25°C) BVDSS -12V RDS(ON) 65mΩ Qg 9nC Qgd 2.4nC ID -3.2A Features and Benefits  Built-in G-S Protection Diode against ESD 2kV HBM  Ultra Small 0.8mm x 0.8mm Package  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a High performance MOSFET in ultra-small 0.8mm x0.8mm package.  Portable Applications  Load Switch  Power Management Functions Mechanical Data  Case: X2-WLB0808-4  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  UBM Opening: 203m NEW PRODUCT ESD PROTECTED Top View Ordering Information (Note 4) Notes: Part Number DMP1100UCB4-7 Case X2-WLB0808-4 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 9W = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M or M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2016 D Jan Feb 12 2017 E Mar 3 2018 F Apr May 45 2019 G Jun Jul 67 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov Dec ND DMP1100UCB4 Document number: DS38339 Rev. 2 - 2 1 of 7 www.diodes.com April 2016 © Diodes Incorporated NEW PRODUCT DMP1100UCB4 Maximum Ratings Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Source Current @ VGS = -4.5V (Note 5) Continuous Source Current @ VGS = -4.5V (Note 6) Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%) Continuous Source-Drain Diode Current TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IDM IS Value -12 8 -2.5 -2.0 -3.2 -2.6 -13 -1.2 Unit V V A A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range . Symbol PD RJA PD RJA TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol BVDSS IDSS IGSS VGS(TH) Min -12 - -0.35 Typ - -0.55 Max 1 10 -0.8 Unit V µA µA V Static Drain-Source On-Resistance RDS(ON) - 65 83 80 96 90 150 115 170 135 300 150 400 m Forward Transfer Admittance Body Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time |Yfs| - 6.5 VSD - -0.7 - Ciss - 680 820 Coss - 220 290 Crss - 205 280 Rg - 11.2 17 Qg - 9.0 14 Qgs - 1.0 - Qgd - 2.6 - tD(ON) - 4.4 9 tR - 10.1 - tD(OFF) - 22 33 tF - 20 - S V pF pF pF  nC nC nC ns ns ns ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. Value 0.67 187 1.1 117 -55 to +150 Unit W °C/W W °C/W °C Test Condition VGS = 0V, ID = -250μA VDS = -12V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -2A VGS = -1.8V, ID = -1A VGS = -1.5V, ID = -1A VGS = -1.4V, ID = -1A VGS = -1.3V, ID = -1A VDS = -4V, IS = -1.5A VGS = 0V, IS = -1.5A, VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V, VDS = -6V, ID = -2A VDD = -4V, ID = -2A VGEN = -4.5V, Rg = 1Ω, RL = 3Ω DMP1100UCB4 Document number: DS38339 Rev. 2 - 2 2 of 7 www.diodes.com April 2016 © Diodes Incorporated DMP1100UCB4 ID, DRAIN CURRENT (A) NEW PRODUCT RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 10.0 8.0 6.0 4.0 VGS = -2.0V VGS = -2.5V VGS = -3.0V VGS = -4.5V VGS = -8.0V VGS = -1.5V 2.0 0.0 0 0.2 VGS = -1.2V VGS = -1.0V 12 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 0.15 VGS = -1.5V 0.1 VGS = -3.6V VGS =-2.5V 0.05 VGS = -4.5V 0 2 4 6 .


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