Document
DMP1100UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary (Typ @VGS = -4.5V, TA = +25°C)
BVDSS -12V
RDS(ON) 65mΩ
Qg 9nC
Qgd 2.4nC
ID -3.2A
Features and Benefits
Built-in G-S Protection Diode against ESD 2kV HBM Ultra Small 0.8mm x 0.8mm Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a High performance MOSFET in ultra-small 0.8mm x0.8mm package.
Portable Applications Load Switch Power Management Functions
Mechanical Data
Case: X2-WLB0808-4 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram UBM Opening: 203m
NEW PRODUCT
ESD PROTECTED
Top View
Ordering Information (Note 4)
Notes:
Part Number DMP1100UCB4-7
Case X2-WLB0808-4
Packaging 3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
9W = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M or M = Month (ex: 9 = September)
Date Code Key Year Code
Month Code
2016 D
Jan Feb 12
2017 E
Mar 3
2018 F
Apr May 45
2019 G
Jun Jul 67
2020 H
Aug 8
Sep 9
2021 I
Oct O
2022 J
Nov Dec ND
DMP1100UCB4
Document number: DS38339 Rev. 2 - 2
1 of 7 www.diodes.com
April 2016
© Diodes Incorporated
NEW PRODUCT
DMP1100UCB4
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Source Current @ VGS = -4.5V (Note 5)
Continuous Source Current @ VGS = -4.5V (Note 6)
Pulsed Drain Current (Pulse Duration 10μs, Duty Cycle ≤1%) Continuous Source-Drain Diode Current
TA = +25°C TA = +70°C
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
ID
IDM IS
Value -12 8 -2.5 -2.0
-3.2 -2.6
-13 -1.2
Unit V V
A
A
A A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range
.
Symbol PD RJA PD RJA
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Symbol
BVDSS IDSS IGSS
VGS(TH)
Min
-12 -
-0.35
Typ
-
-0.55
Max
1 10
-0.8
Unit
V µA µA
V
Static Drain-Source On-Resistance
RDS(ON)
-
65 83 80 96 90 150 115 170 135 300 150 400
m
Forward Transfer Admittance Body Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
|Yfs| - 6.5 VSD - -0.7 -
Ciss - 680 820
Coss - 220 290
Crss - 205 280
Rg - 11.2 17
Qg - 9.0 14
Qgs - 1.0 -
Qgd - 2.6 -
tD(ON) - 4.4
9
tR
- 10.1
-
tD(OFF)
-
22
33
tF
- 20
-
S V
pF pF pF nC nC nC ns ns ns ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Value 0.67 187 1.1 117 -55 to +150
Unit W
°C/W W
°C/W °C
Test Condition
VGS = 0V, ID = -250μA VDS = -12V, VGS = 0V VGS = 8V, VDS = 0V
VDS = VGS, ID = -250μA VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -2A VGS = -1.8V, ID = -1A VGS = -1.5V, ID = -1A VGS = -1.4V, ID = -1A VGS = -1.3V, ID = -1A VDS = -4V, IS = -1.5A VGS = 0V, IS = -1.5A,
VDS = -6V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V, VDS = -6V, ID = -2A
VDD = -4V, ID = -2A VGEN = -4.5V, Rg = 1Ω, RL = 3Ω
DMP1100UCB4
Document number: DS38339 Rev. 2 - 2
2 of 7 www.diodes.com
April 2016
© Diodes Incorporated
DMP1100UCB4
ID, DRAIN CURRENT (A)
NEW PRODUCT
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
10.0 8.0 6.0 4.0
VGS = -2.0V VGS = -2.5V VGS = -3.0V VGS = -4.5V VGS = -8.0V
VGS = -1.5V
2.0 0.0
0
0.2
VGS = -1.2V VGS = -1.0V
12 VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
0.15
VGS = -1.5V
0.1
VGS = -3.6V
VGS =-2.5V
0.05
VGS = -4.5V
0 2 4 6 .