INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF223
DESCRIPTION ·Drain Current ID=...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF223
DESCRIPTION ·Drain Current ID=4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =1.2Ω(Max) ·High Speed Applications
APPLICATIONS ·Switching power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
150 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 4 A
Total Dissipation@TC=25℃
40 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient
3.12 30
℃/W ℃/W
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INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=2.5A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=150V; VGS=0
VSD Diode Forward Voltage
IS=4A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr Rise Time
td(on)
Turn-on Delay Time
tf Fall Time
ID=2.5A; VDD=100V; RL=50...