IRFP250

Data Sheet January 2002 IRFP250 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9295. Ordering Information PART NUMBER PACKAGE BRAND IRFP250 TO-247 IRFP250 NOTE: When ordering, use the entire part number. Features 33A, 200V rDS(ON) = 0.085Ω Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (TAB) ©2002 Fairchild Semiconductor Corporation IRFP250 Rev. B IRFP250 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFP250 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . ....