TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS406
High Speed Switching Application
1SS406
Unit: mm
z Low forward voltage z Low reverse current z Small total capacitance
: VF (3) = 0.50V (typ.) : IR= 0.5μA (max) : CT = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
2...
