IS29GL256

IS29GL256 IS29GL128 256Mb/128Mb 3.0V PAGE MODE PARALLEL FLASH MEMORY DATA SHEET IS29GL256/128 256/128 Megabit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only IS29GL256/128 FEATURES Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. 8-word/16-byte page read buffer 32-word/64-byte write buffer reduces overall programming time for multiple-word updates Secured Silicon Region (SSR) - 512-word/1024-byte sector for permanent, secure identification - 256-word Factory Locked SSR and 256-word Customer Locked SSR Uniform 64Kword/128KByte Sector Architecture Suspend and Resume commands for Program and Erase operations Write operation status bits indicate program and erase operation completion Support for CFI (Common Flash Interface) Volatile and non-volatile methods of Advanced Sector Protection WP#/ACC input - Accelerates programming time (when VHH is applied) for greater throughput during system production - Protects first or last sector regardless of sector protection settings Hardware reset input (RESET#) resets device Ready/Busy# output (RY/BY#) detects program or erase cycle completion Minimum 100K program/erase endurance cycles. Data retention : 20 years (TYP) Package ...