2Gb DDR3 SDRAM
IS43/46TR16128C, IS43/46TR16128CL, IS43/46TR82560C, IS43/46TR82560CL
256Mx8, 128Mx16 2Gb DDR3 SDRAM
FEATURES Standard...
Description
IS43/46TR16128C, IS43/46TR16128CL, IS43/46TR82560C, IS43/46TR82560CL
256Mx8, 128Mx16 2Gb DDR3 SDRAM
FEATURES Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V High speed data transfer rates with system
frequency up to 1066 MHz 8 internal banks for concurrent operation 8n-Bit pre-fetch architecture Programmable CAS Latency Programmable Additive Latency: 0, CL-1,CL-2 Programmable CAS WRITE latency (CWL) based
on tCK Programmable Burst Length: 4 and 8 Programmable Burst Sequence: Sequential or
Interleave BL switch on the fly Auto Self Refresh(ASR) Self Refresh Temperature(SRT)
OPTIONS Configuration: 256Mx8 128Mx16 Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.5mm) for x8
ADVANCED INFORMATION JANUARY 2015
Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh Asynchronous RESET pin TDQS (Termination Data Strobe) supported (x8
only) OCD (Off-Chip Driver Impedance Adjustment) Dynamic ODT (On-Die Termination) Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω) Write Leveling Operating temperature:
Commercial (TC = 0°C to +95°C) Industrial (TC = -40°C to +95°C) Automotive, A1 (TC = -40°C to +95°C) Automotive, A2 (TC = -40°C to +105°C)
ADDRESS TABLE Parameter Row Addressing Column Addressing Bank Addressing Page size Auto Precharge Addressing BL switch on the fly...
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