Document
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF330
DESCRIPTION ·Drain Current ID=5.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max) ·Fast Switching Speed
APPLICATIONS ·High voltage,high speed applications ·Off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
400 ±20
V V
Drain Current-continuous@ TC=25℃ 5.5 A
Total Dissipation@TC=25℃
75 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.67 ℃/W
isc website:www.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF330
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 3A
IGSS Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 400V; VGS= 0
VSD Diode Forward Voltage
IF= 5.5A; VGS= 0
MIN MAX UNIT 400 V
24V 1.0 Ω
±100 nA 250 uA 1.6 V
isc website:www.iscsemi.cn
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