MOSFET Transistor. IRF340 Datasheet

IRF340 Transistor. Datasheet pdf. Equivalent


Inchange Semiconductor IRF340
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF340
DESCRIPTION
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speeds
·IDSS,VDS(on),SOA and VGS(th) specified at Elevated
temperature
·Rugged
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
400
±20
V
V
Drain Current-continuous@ TC=2510 A
Total Dissipation@TC=25
125 W
Max. Operating Junction Temperature -55~150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 /W
Rth j-A Thermal Resistance,Junction to Ambient 30 /W
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IRF340 Datasheet
Recommendation IRF340 Datasheet
Part IRF340
Description N-Channel MOSFET Transistor
Feature IRF340; INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF340 DESCRIPTIO.
Manufacture Inchange Semiconductor
Datasheet
Download IRF340 Datasheet




Inchange Semiconductor IRF340
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF340
·ELECTRICAL CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 5.2A
IGSS Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 400V; VGS= 0
VSD Diode Forward Voltage
IF= 10A; VGS= 0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
MIN TYP MAX UNIT
400 V
2 4V
0.55 Ω
±100
nA
250 uA
2.0 V
1250 1600
pF
300 450
pF
80 150 pF
·SWITCHING CHARACTERISTICS (TC=25)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
VDD=200V,ID=10A
RG=9.1Ω
Tf Fall Time
MIN TYP MAX UNIT
17 21 ns
27 41 ns
45 75 ns
20 36 ns
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark
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