INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF353
DESCRIPTION ·silicon Gate for ...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF353
DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged
APPLICATIONS ·high voltage,high speed applications such as off-line
Switching power supplies,AC and DCmotor controls relay and solenoid driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
350 ±20
V V
Drain Current-continuous@ TC=25℃ 13 A
Total Dissipation@TC=25℃
150 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
0.83 30
℃/W ℃/W
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INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=8A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=350V; VGS=0
VSD Diode Forward Voltage
IF=135A; VGS=0
Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance
VDS=25V; VGS=0V; fT=1MHz
tr Rise Time td(on) Turn-on Telay Time
tf Fall Time
ID=8A; VDD=180V; RL...