INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF451
DESCRIPTION ·13A,450V ·Low RDS...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF451
DESCRIPTION ·13A,450V ·Low RDS(on) at high voltage ·Improved inductive ruggedness ·Low input Characteristics ·Fast switching times ·Extended safe operating area
APPLICATIONS ·Designed for applications such as switching
regulators,
switching convertors ,motor drivers ,relay driver ,and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0) Gate-Source Voltage
450 ±20
V V
Drain Current-continuous@ TC=25℃ 13 A
Total Dissipation@TC=25℃
125 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-A
Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient
0.83 30
℃/W ℃/W
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INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
IRF451
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0; ID= 0.25mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 7.2A
IGSS Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS Zero Gate Voltage Drain Current
VDS= 450V; VGS= ...