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IRF512 Dataheets PDF



Part Number IRF512
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet IRF512 DatasheetIRF512 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF512 ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Co.

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements isc Product Specification IRF512 ·DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 100 ±20 V V ID Drain Current-Continuous 4.9 A IDM Drain Current-Single Plused 18 A PD Total Dissipation @TC=25℃ 43 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF512 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 100 V VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VDS= VGS; ID= 0.25mA VGS= 10V; ID= 3.4A VGS= ±20V;VDS= 0 2 4V 0.54 Ω ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 100V; VGS=0 250 uA VSD Forward On-Voltage IS= 5.6A; VGS=0 2.0 V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V,VGS=0V, F=1.0MHz 135 pF 80 pF 20 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS Td(on) Turn-on Delay Time Tr Rise Time Td(off) Turn-off Delay Time VDD=50V,ID=5.6A VGS=10V,RGEN=24Ω RGS=24Ω Tf Fall Time MIN TYP MAX UNIT 8 11 ns 25 36 ns 15 21 ns 12 21 ns isc website:www.iscsemi.cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn .


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