512Mb SDRAM
IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D
16Mx32, 32Mx16, 64Mx8 MAY 2015 512Mb SDRAM
device OVERVIEW
...
Description
IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D
16Mx32, 32Mx16, 64Mx8 MAY 2015 512Mb SDRAM
device OVERVIEW
FEATURES
Clock frequency: 200, 166, 143 MHz Fully synchronous; all signals referenced to a
positive clock edge Internal bank for hiding row access/precharge Power supply: Vdd/Vddq = 2.3V-3.6V
IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 LVTTL interface Programmable burst length – (1, 2, 4, 8, full page) Programmable burst sequence: Sequential/Interleave
ISSI's 512Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.
PACKAGE INFORMATION
IS42/45S32160D IS42/45S16320D IS42/45S86400D
IS42/45R32160D IS42/45R16320D IS42/45R86400D
4M x 32 x 4
8M x 16 x 4
16M x 8 x 4
banks
banks
banks
90-ball TF-BGA 54-pin TSOP-II 54-pin TSOP-II
54-ball TF-BGA
KEY TIMING PARAMETERS
Parameter
-5
-6
-7 Unit
Auto Refresh (CBR)
Self Refresh
8K refresh cycles every 64 ms
Random column address every clock cycle Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command
Packages: x8/x16: 54-pin TSOP-II, 54-ball TF-BGA (x16 only) x32: 90-ball TF-BGA
Temperature Range: Commercial (0oC to +70oC) Industrial (-40oC to +85oC) Automotive, A1 (-40oC to +85oC) Automotive, A2 (-40oC to +...
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