4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32160E
4M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32160E are mobile 53...
Description
IS42/45SM/RM/VM32160E
4M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS.
Features
JEDEC standard 3.3V, 2.5V, 1.8V power supply Auto refresh and self refresh All pins are compatible with LVCMOS interface 8K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade) Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst Programmable CAS Latency : 2, 3 clocks
All inputs and outputs referenced to the positive edge of the system clock
Data ...
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