DB3 Diodes Datasheet

DB3 Datasheet, PDF, Equivalent


Part Number

DB3

Description

150mW Bi-directional Trigger Diodes

Manufacture

Fairchild Semiconductor

Total Page 4 Pages
Datasheet
Download DB3 Datasheet


DB3
DB3-DB3TG
150mW Bi-directional Trigger Diodes
Features
• VBO : 32V Version
• Low break-over current
• DO-35 package (JEDEC)
• Hermetically sealed glass
• Compression bonded construction
• All external surfaces are corrosion resistant and
terminals are readily solderable
• RoHS compliant
• High reliability glass passivation insuring parameter stability and
protection against junction contamination.
• Terminal: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
• High temperature soldering guaranteed : 260°C/10 seconds
September 2010
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings and Electrical Characteristics
Symbol
Parameter
VBO
±VBO
IBO
ΔV
IB
VO
PD
IFRM
Rθja
TJ, TSTG
Break-over Voltage
@ C=22nF Min.
Typ.
Max.
Break-over Voltage Symmetry
@ C=22nF Max.
Break-over Current
@ C=22nF Max.
Dynamic Break-over Voltage @ IBO to IF=10mA Min.
Leakage Current
@ VB=0.5VBO(Max.) Max.
Output Voltage
*see diagram 1 Min.
Power Dissipation
Repetitive Peak Forward Current, Pulse Width=20μsec
Typical Thermal Resistance, Junction to Ambient (Note1)
Junction and Storage Temperature Range
Value
DB3
DB3TG
28 30
32 32
36 34
±3 ±2
100 15
59
10
5
150
2
400
-40 to +125
* Rating at 25°C ambient temperature unless otherwise specified.
* Notes: 1. Valid provided that electrodes are kept at ambient temperature
Units
V
V
V
V
μA
V
μA
V
mW
A
°C/W
°C
© 2010 Fairchild Semiconductor Corporation
DB3-DB3TG Rev. A1
1
www.fairchildsemi.com

DB3
Typical Performance Characteristics
IF=10m
IBO
IB
VB=0.5*VBO
ǻV
VF
VBO
VBO : Break-Over Voltage
IBO : Break-Over Current
ǻV : Dynamic Breakover Voltage
IB : Leakage Current at VB=0.5*VBO
VF : Voltage at Current IF=10mA
Diagram 1 : Test circuit
Figure 1. Admissible Power Dissipation Curve
160
120
80
40
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Ambient Tempeatature (oC)
Figure 2. Relative Variation of VBO versus
Junction Temperature
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
25
50 75 100
Tj(°C)
125
Figure 3. Repetitive Peak Pulse Current versus
Pulse Duration (maximum values)
100
10
1
0.1
1
10
tp (ȝs)
100
© 2010 Fairchild Semiconductor Corporation
DB3-DB3TG Rev. A1
2
www.fairchildsemi.com


Features DB3-DB3TG — 150mW Bi-directional Trigg er Diodes DB3-DB3TG 150mW Bi-direction al Trigger Diodes Features • VBO : 32 V Version • Low break-over current DO-35 package (JEDEC) • Hermeticall y sealed glass • Compression bonded c onstruction • All external surfaces a re corrosion resistant and terminals ar e readily solderable • RoHS compliant • High reliability glass passivation insuring parameter stability and prote ction against junction contamination. Terminal: Pure tin plated, lead free , solderable per MIL-STD-202, Method 20 8 guaranteed • High temperature solde ring guaranteed : 260°C/10 seconds Se ptember 2010 DO-35 Color Band Denotes C athode Absolute Maximum Ratings and El ectrical Characteristics Symbol Param eter VBO ±VBO IBO ΔV IB VO PD IFRM R θja TJ, TSTG Break-over Voltage @ C= 22nF Min. Typ. Max. Break-over Volta ge Symmetry @ C=22nF Max. Break-over Current @ C=22nF Max. Dynamic Break-o ver Voltage @ IBO to IF=10mA Min. Leakage Current @ VB=0.5VBO(Max.) Max. Output Voltag.
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