500V N-Channel MOSFET
HD830_HU830
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On...
Description
HD830_HU830
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 2.5 A
2.5 --
Off Characteristics
BVDSS ΔBVDSS
/ΔTJ IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125℃ VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500 -----
--
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
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Switching Characteristics
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 250 V, ID = 4.5 A, RG = 25 Ω
(Note 4,5)
VDS = 400V, ID = 4.5 A, VGS = 10 V
(Note 4,5)
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Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 4.5 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 4.5 A, VGS = 0 V diF/dt = 100 A/μs (Note 4)
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Typ Max Units
-- 4.5 1.2 1.5
V Ω
-- -- V 0.5 -- V/℃ -- 1 ㎂ -- 10 ㎂ -- 100 ㎁
-- -1...
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