DB3 Diode Datasheet

DB3 Datasheet, PDF, Equivalent


Part Number

DB3

Description

150mW Bi-directional Trigger Diode

Manufacture

Taiwan Semiconductor

Total Page 2 Pages
Datasheet
Download DB3 Datasheet


DB3
Small Signal Diode
DB3-DB3TG
150mW Bi-directional Trigger Diode
DO-35 Axial Lead
HERMETICALLY SEALED GLASS
Features
—Designed for through-Hole Device Type Mounting.
—Hermetically Sealed Glass.
—All external suface are corrosion resistant and
terminals are readily solderable.
—High reliability glass passivation insuring parameter
stability and protection against junction contamination.
—Pb free version and RoHS compliant
Mechanical Data
—Case :DO-35 Solder Hot Dip Tin (Sn) lead finish
—Terminal: Pure tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
—High temperature soldering guaranteed: 260°C/10s
—Marking : DB3/DB3TG
—Weight : 0.1255 gram (approximately)
D
A
B
C
Dimensions
A
B
C
D
Unit (mm) Unit (inch)
Min
0.45
3.05
25.4
1.53
Max
0.55
5.08
38.1
2.28
Min
0.018
0.120
1.000
0.060
Max
0.022
0.200
1.500
0.090
Ordering Information
Part No.
DB3/DB3TG RI
Package
DO-35
Packing
5Kpcs / 10" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Repetitive Peak Forward Current
Pulse Width=
20μsec
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
PD
IFRM
RθJA
TJ, TSTG
Value
150
2
400
-40 to + 125
Units
mW
A
°C/W
°C
Electrical Characteristics
Type Number
Break-over Voltage
Break-over Voltage Symmetry
Break-over Current
Maxiumn Leakage Current
Junction Capacitance
Output Voltage
Reverse Recovery Time
C= 22nF
C= 22nF
C= 22nF
VR= 0.5V
VR=0, f=1.0MHz
(Note2)
Symbol
VBO
+ / -VBO
IBO
IR
CJ
VO
Trr
DB3
32
+/-3
100
DB3TG
32
+/-2
15
10
22.0
5
1.5
Units
V
V
nA
μA
nF
V
μs
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Test Condition : IF=0.5A, RL=100
Version : C09

DB3
Small Signal Diode
Rating and Sharacteristic Curves
VBO
Δ
IF=10m
ΔVF
I(BO)F
V IB
I(BO)R
VB VF
VBO
IR=10m
FIG 1 Admissible Power Dissipation Curve
160
120
80
40
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Ambient Tempeatature (oC)
DB3-DB3TG
150mW Bi-directional Trigger Diode
VBO :Break-Over Voltage at IBO
IBO : Test current for voltage VBO
VF : Dynamic impedance at IF
IB : Test current for voltage VB
VB : Voltage at current IB
IB : Test current for voltage VB
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
25
FIG 2 Typical Junction Capacitance
50 75 100
Reverse Voltage (V)
125
FIG 3 Peak pulse current versus duration
10
1
0.1
0.01
10
100
Trr (μs)
1000
10000
Version : C09


Features Small Signal Diode DB3-DB3TG 150mW Bi-d irectional Trigger Diode DO-35 Axial Le ad HERMETICALLY SEALED GLASS Features —Designed for through-Hole Device Type Mounting. —Hermetically Sealed Glass. —All external suface are corrosion re sistant and terminals are readily solde rable. —High reliability glass passiva tion insuring parameter stability and p rotection against junction contaminatio n. —Pb free version and RoHS compliant Mechanical Data —Case :DO-35 Solder H ot Dip Tin (Sn) lead finish —Terminal: Pure tin plated, lead free., solderabl e per MIL-STD-202, Method 208 guarantee d —High temperature soldering guarante ed: 260°C/10s —Marking : DB3/DB3TG — Weight : 0.1255 gram (approximately) D A B C Dimensions A B C D Unit (mm) Unit (inch) Min 0.45 3.05 25.4 1.53 M ax 0.55 5.08 38.1 2.28 Min 0.018 0.120 1.000 0.060 Max 0.022 0.200 1.500 0.0 90 Ordering Information Part No. DB3/ DB3TG RI Package DO-35 Packing 5Kpcs / 10" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C .
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