DB3 DIAC Datasheet

DB3 Datasheet, PDF, Equivalent


Part Number

DB3

Description

SILICON BIDIRECTIONAL DIAC

Manufacture

MCC

Total Page 3 Pages
Datasheet
Download DB3 Datasheet


DB3
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
l The three layer, two terminal, axial lead, hermetically sealed
diacs are designed specifically for triggering thyristors.
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Moisture Sensitivity: Level 1
l These diacs are intended for use in thyrisitors phase control ,
circuits for lamp dimming, universal motor speed control ,and
heat control. Type number is marked.
Maximum Ratings
l Operating Temperature: -40oC to +125oC
l Storage Temperature: -40oC to +125oC
l Thermal Resistance Junction to Lead:167oC/W
l Thermal Resistance Junction to Ambient: 400oC/W
Electrical Characteristics @ 25oC Unless Otherwise Specified
Power dissipation
on Printed
Circuit(l=10mm)
Repetitive Peak
on-state Current
DB3,DC34,DB4
Breakover Voltage
DB3
DC34
DB4
PC
ITRM
VBO
150mW
TA=65oC
2.0A tp=10us, f=100HZ
Min Typ Max
28 32 36V
30 34 38V
C=22nF(Note 3)
35 40 45V
Dynamic Breakover
Voltage(Note 2)
ΔV
5V(Min.) VBO and VF at10mA
Breakover Voltage
Symmetry
| + VBO |
DB3, DC34, DB4 -|-VBO|
Output
Voltage(Note 2)
Vo(min)
Breakover
Current(Note 2)
IBO(max)
±3V
5V
100uA
C=22nF(Note 3)
C=22nF
Rise Time(Note 2) Tr
1.5us
Leakage
Current(Note 2)
IB(max)
10uA
VB =0.5VBO(max)
Note:
1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
2. Electrical characteristics applicable in both forward and
reverse directions.
3. Connected in parallel with the devices.
DB3/DC34
AND
DB4
SILICON
BIDIRECTIONAL
DIAC
DO-35G
D
A
B
D
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
A
---
.150
---
B
---
.079
---
C
---
.020
---
D 1.083 --- 27.50
MAX
3.8
2.00
.52
---
NOTE
Revision: B
www.mccsemi.com
1 of 3
2011/06/20

DB3
Typical Performance Characteristics
IF=10m
IBO
IB
0.5VBO
ǻV
VF
VBO
MCC
TM
Micro Commercial Components
VBO : Break-Over Voltage
IBO : Break-Over Current
ǻV : Dynamic Breakover Voltage
IB : Leakage Current at VB=0.5*VBO
VF : Voltage at Current IF=10mA
Diagram 1 : Test circuit
Figure 1. Admissible Power Dissipation Curve
160
120
80
40
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Ambient Tempeatature (oC)
Figure 2. Relative Variation of VBO versus
Junction Temperature
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
25
50 75 100
Tj(°C)
125
Figure 3. Repetitive Peak Pulse Current versus
Pulse Duration (maximum values)
100
10
1
0.1
1
10
tp (ȝs)
100
Revision: B
www.mccsemi.com
2 of 3
2011/06/20


Features MCC TM Micro Commercial Components    omponents 20736 Marilla S treet Chatsworth     !"# $ %    !"# Feat ures l The three layer, two terminal, a xial lead, hermetically sealed diacs ar e designed specifically for triggering thyristors. • Lead Free Finish/Rohs C ompliant (Note1) ("P"Suffix designates Compliant. See ordering information) Moisture Sensitivity: Level 1 l These diacs are intended for use in thyrisit ors phase control , circuits for lamp d imming, universal motor speed control , and heat control. Type number is marked . Maximum Ratings l Operating Temperatu re: -40oC to +125oC l Storage Temperatu re: -40oC to +125oC l Thermal Resistanc e Junction to Lead:167oC/W l Thermal Re sistance Junction to Ambient: 400oC/W E lectrical Characteristics @ 25oC Unless Otherwise Specified Power dissipation on Printed Circuit(l=10mm) Repetitive Peak on-state Current DB3,DC34,DB4 Brea kover Voltage DB3 DC34 DB4 PC ITRM VBO 150mW TA=65oC 2.0A tp=10u.
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