DC34

DB3, DB4, DC34 SILICON BIDIRECTIONAL DIACS The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls. Max. 0.5 Max. 1.9 Min. 27.5 Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation (Ta = 65 OC) Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz) Operating Junction and Storage Temperature Range Symbol Ptot ITRM Tj,Tstg Value 150 2 - 40 to + 125 Unit mW A OC Characteristics at Ta = 25 OC Parameter Breakover Voltage Breakover Currents Breakover Voltage Symmetry Dynamic Breakover Voltage ΔI = [IBR to IF = 10 mA] DB3 DC34 DB4 Symbol V(BR)1 and V(BR)2 I(BR)1 and I(BR)2 [V(BR)1]-[V(BR)2] | ΔV ± | Min. 28 30 35 - 5 Max. 36 38 45 200 3.8 - Unit V µA V V SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 08/11/2008 DB3, DB4, DC34 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 08/11/2008 ...