2SD2396

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2396 TRANSISTOR (NPN) TO – 220F FEATURES  Available in TO-220 F package  Darling connection provides high dc current gain (hFE)  Large collector power dissipation  Low frequency and Power amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature 1. BASE 123 2. COLLECTOR 3. EMITTER Value 80 60 6 3 2 62.5 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Collector-base breakdown voltag V(BR)CBO IC=50μA, IE=0 80 Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 60 Emitter-base breakdown voltage V(BR)EBO IE=50u A,IC=0 6 Collector cut-off current ICBO VCB=80V,IE=0 Emitter cut-off current DC current gain Collector-emitter saturation voltage IEBO hFE* VCE(sat)* VEB=6V,IC=0 VCE=4V, IC=0.5A IC=2A,IB=50mA 400 Base-emitter saturation voltage VBE(sat) IC=2A,IB=50mA Collector output capacitance Cob VCB=10V,IE=0, f=1MHz Transition frequency fT *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. VCE=5V,IC=0.2A,f=10MHz Typ Max 100 100 2000 0.8 1.5 55 40 Unit V V V μA μA V V pF MHz CLASSIFICATION OF hFE* RANK RAN...